<p>A structure including a grating and a semiconductor nanocrystal layer on the grating, can be a laser. The semiconductor nanocrystal layer can include a plurality of semiconductor nanocrystals including a Group II-VI compound, the nanocrystals being distributed in a metal oxide matrix. The grating can have a periodicity from 200 nm to 500 nm.</p>
申请公布号
DE60227840(D1)
申请公布日期
2008.09.04
申请号
DE2002627840
申请日期
2002.11.18
申请人
MASSACHUSETTS INSTITUTE OF TECHNOLOGY;THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
发明人
EISLER, HANS J.;SUNDAR, VIKRAM C.;WALSH, MICHAEL E.;KLIMOV, VICTOR I.;BAWENDI, MOUNGI G.;SMITH, HENRY I.
