| 摘要 |
A semiconductor package is provided to reduce breakdown of a wafer die by securing a height of a bonding wire and processing thickly a thickness of a wafer die. A connective pad(101) is formed in a substrate(100). A circuit is formed on an upper surface of a first wafer die(110). A lower surface of the first wafer die is directed to the substrate. A first adhesive(120) is coated between the substrate and the lower surface of the first wafer die. A second wafer die(130) has an upper surface larger than the upper surface of the first wafer die and a circuit formed on the upper surface thereof. The wafer die includes a first protrusion protruded from an edge thereof and a second protrusion protruded from a center thereof. A second adhesive(140) is coated between the second protrusion and the upper surface of the first wafer die. A first wire part(150) is formed to connect the first wafer die with the connective pad. A second wire part(160) is formed to connect the second wafer die with the connective pad. |
