Semiconductor light-emitting device, and a method of manufacture of a semiconductor device

摘要

A method of manufacturing a nitride semiconductor device comprises the steps of: growing an In_xGa_1-xN (0<=x<=1) layer, and growing an aluminium-containing nitride semiconductor layer over the In_xGa_1-xN layer at a growth temperature of at least 500° C. so as to form an electron gas region at an interface between the In_xGa_1-xN layer and the nitride semiconductor layer. The nitride semiconductor layer is then annealed at a temperature of at least 800° C. The method of the invention can provide an electron gas having a sheet carrier density of 6x10¹³cm^-2 or greater. An electron gas with such a high sheet carrier concentration can be obtained with an aluminium-containing nitride semiconductor layer having a relatively low aluminium concentration, such as an aluminium mole fraction of 0.3 or below, and without the need to dope the aluminium-containing nitride semiconductor layer or the In_xGa_1-xN layer.