发明名称 |
Phase change memory device having semiconductor laser unit |
摘要 |
Provided is a phase change memory device including: a phase change memory unit comprising a phase change layer pattern; a laser beam focusing unit locally focusing a laser beam on the phase change layer pattern of the phase change memory unit; and a semiconductor laser unit generating and emitting the laser beam towards the laser beam focusing unit. Thus set or reset operations in the phase change memory device uses laser beams locally applied, thereby reducing the consumption power and preventing destruction or change in information stored in neighboring cell during the operations of unit cell. |
申请公布号 |
US7417891(B2) |
申请公布日期 |
2008.08.26 |
申请号 |
US20060635279 |
申请日期 |
2006.12.07 |
申请人 |
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
发明人 |
YU BYOUNG GON;LEE SEUNG YUN;RYU SANGOUK;YOON SUNG MIN;PARK YOUNG SAM;CHOI KYU JEONG;LEE NAM YEAL |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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