发明名称 Interfacing at Low Temperature using CMOS Technology
摘要 This invention concerns interfacing to electronic circuits or systems operating at low temperature or ultra-low temperature using complementary metal-oxide semiconductor (CMOS) technology. Low temperature in this case refers to cryogenic temperatures in particular, but not exclusively, to the 4.2 K region. Ultra-low temperatures here refers to the sub-1 K range, usually accessed using dilution refrigerator systems. The electronic circuits comprise a controller (for writing and manipulation), an observer (for readout and measurement) circuits, or both, fabricated from ultra-thin silicon-on-insulator (SOI) CMOS technology.
申请公布号 AU2008200506(A1) 申请公布日期 2008.08.21
申请号 AU20080200506 申请日期 2008.02.01
申请人 QUCOR PTY LTD 发明人
分类号 H03K17/00;G06N99/00;H01L27/12 主分类号 H03K17/00
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