发明名称 RESISTANCE CHANGE ELEMENT, METHOD OF MANUFACTURING THE SAME, AND RESISTANCE CHANGE MEMORY USING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a resistance change element having excellent resistance change performance and excellent sustaining characteristics of electrical resistance values, and also to provide a method of manufacturing the same. <P>SOLUTION: The resistance change element includes a substrate and a multilayer structure arranged on the substrate, wherein the multilayer structure includes an upper electrode, a lower electrode, and a resistance change layer arranged between the upper and lower electrodes. In the resistance change element, two or more states exist, each of which has a mutually different value of electrical resistance between the upper and lower electrodes. By applying a driving voltage or current between the upper and lower electrodes, a change occurs from one state to another state selected from the two or more states. The resistance change layer of the element includes an oxide indicated by the formula M(Fe<SB>2-x</SB>A<SB>x</SB>)O<SB>4</SB>, where M denotes at least one element selected from Mn, Co, Ni, Cu, and Zn; A denotes at least one element selected from Ti, V, Nb, Ta, Cr, Mn, Co, and Rh, and is a different element from M; and x denotes a numerical value satisfying the formula 0<x&le;0.5. <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008192995(A) 申请公布日期 2008.08.21
申请号 JP20070028452 申请日期 2007.02.07
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 ODAKAWA AKIHIRO
分类号 H01L27/10;H01L45/00;H01L49/00 主分类号 H01L27/10
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