发明名称 PROCEDE DE NETTOYAGE D'UNE CHAMBRE DE DEPOT
摘要 The invention relates to a method for removing a metal deposit placed on a surface in a chamber. Said method includes the following steps: a) a step of oxidizing the metal deposit; b) a step of injecting chemical species that are suitable for volatilizing the oxidized metal deposit, said Step b) being at least partially implemented during Step a). Said removal method is characterized in that, in Step b), the chemical species are injected according to a sequence of pulses.
申请公布号 FR3024161(B1) 申请公布日期 2016.08.12
申请号 FR20140057137 申请日期 2014.07.24
申请人 ALTATECH SEMICONDUCTOR 发明人 VITIELLO JULIEN
分类号 C23C16/44;B08B7/00;C23C14/22 主分类号 C23C16/44
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