| 摘要 |
A power MOSFET that includes deep source field electrodes, the power MOSFET including one trench that includes an insulated gate and another trench that does not include an insulated gate, both trenches including a source field electrode, a source region adjacent the one trench and no source region adjacent the another trench, and a high conductivity contact region between the two trenches and disposed to divert at least a portion of the avalanche current away from regions under the source region and toward the high conductivity contact region.
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