A semiconductor apparatus is provided to minimize a defect rate of a semiconductor memory apparatus by cutting a fuse with a laser or an electrical manner. A fuse unit includes a semiconductor substrate(10), a first fuse(F1), a first fuse formed on the first fuse, and a contact(C1) coupling the first fuse and a second fuse. An interlayer dielectric(20) is formed on the semiconductor substrate. The first fuse is formed on the interlayer dielectric. An inter-metal dielectric(30) having a contact hole is formed on the first fuse. The contact hole exposes a part of an upper surface of the first fuse. The contact coupling the first fuse to the second fuse is formed on the contact hole. The first fuse and the second fuse are serially connected by the contact. The second fuse is formed on the contact and the second interlayer dielectric. The second fuse is overlapped with the first fuse. A constant region of the second fuse is cut by a laser.
