发明名称 TEMPERATURE MEASUREMENT AND CONTROL OF WAFER SUPPORT IN THERMAL PROCESSING CHAMBER
摘要 PROBLEM TO BE SOLVED: To provide an apparatus and a method used for RTP (Rapid Thermal Process) to improve temperature uniformity. SOLUTION: The present invention provides an apparatus and a method for achieving uniform heating to a substrate during a rapid thermal process. More particularly, the present invention provides an apparatus and a method for controlling the temperature of an edge ring supporting a substrate during a rapid thermal process to improve temperature uniformity across the substrate. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008182228(A) 申请公布日期 2008.08.07
申请号 JP20080006093 申请日期 2008.01.15
申请人 APPLIED MATERIALS INC 发明人 HUNTER AARON MUIR;ADAMS BRUCE E;BEHDJAT MEHRAN;RAMANUJAM RAJESH S;RANISH JOSEPH M
分类号 H01L21/26 主分类号 H01L21/26
代理机构 代理人
主权项
地址