| 摘要 |
A method for making a trench DMOS (1) is provided that improves the breakdown voltage of the oxide layer in a device having at least a first trench (11) disposed in the active region (12) of the device and a second trench (11') disposed in the termination region (12') of the device. In accordance with the method, mask techniques are used to thicken the oxide layer (13') in the vicinity of the top corner of the second trench, to at least about 1.2 times the thickness of the oxide layer (13) in the first trench, thereby compensating for the thinning of this region (and the accompanying reduction in breakdown voltage) that occurs due to the two-dimensional oxidation during the manufacturing process. |
