发明名称 |
CMOS IMAGE SENSORS |
摘要 |
A complementary metal-oxide semiconductor (CMOS) image sensor comprises a photodiode region generating electrical charges in response to incident light thereon. The CMOS image sensor further comprises a first floating diffusion layer adapted to receive the electrical charges from the photodiode region in response to a global transfer signal and a second floating diffusion region adapted to receive the electrical charges from the first floating diffusion region in response to a pixel selection signal.
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申请公布号 |
US2008185621(A1) |
申请公布日期 |
2008.08.07 |
申请号 |
US20080062552 |
申请日期 |
2008.04.04 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
YI DUK-MIN;KIM JONG-CHAE;PARK JIN-HYEONG |
分类号 |
H01L27/146;H04N5/369;H04N5/374 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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