| 摘要 |
PROBLEM TO BE SOLVED: To provide a phase-change substance layer and method of manufacturing the same, phase-change memory device provided with the same, and its manufacturing method and operation method. SOLUTION: This phase-change substance layer is a compound layer of four components containing indium, and the content (a) of In is 15 at.%≤a≤20 at.%, and the phase-change substance layer can be an In<SB>a</SB>Ge<SB>b</SB>Sb<SB>c</SB>Te<SB>d</SB>layer. At this time, the content (b) of Ge can be 10 at.%≤b≤15 at.%, the content (c) of Sb can be 20 at.%≤c≤25 at.%, and the content (d) of Te can be 40 at.%≤d≤55 at.%. COPYRIGHT: (C)2008,JPO&INPIT |
