| 摘要 |
PROBLEM TO BE SOLVED: To prevent an abnormal shape from being formed on the bottom of a recess, when the recess is formed in an insulating film that consists mainly of organic siloxane. SOLUTION: A method for manufacturing semiconductor integrated circuit device forms an embedded wiring structure by burying a conductor film in a recess 4, such as, a groove and hole formed in an organic insulating film 2 consisting mainly of organic siloxane constituting an interlayer insulating film. In the method for manufacturing semiconductor integrated circuit device, when the recess 4 such as a groove and hole is to be formed in the organic insulating film 2 with a photoresist film 3, formed previously on the organic insulating film 2 as an etching mask, a plasma dry etching using CF-based gas/N<SB>2</SB>/Ar gas is effected to prevent the abnormal shape from being formed on the bottom of the recess 4 and forms the recess 4. COPYRIGHT: (C)2008,JPO&INPIT
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