| 发明名称 |
NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE |
| 摘要 |
A nitride semiconductor light emitting device includes a substrate formed of silicon, an insulating film formed on the substrate and a single crystal thin film formed on the insulating film. On the single crystal film, a semiconductor laminated body including a light emitting layer of nitride semiconductor is formed.
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| 申请公布号 |
US2008179606(A1) |
申请公布日期 |
2008.07.31 |
| 申请号 |
US20080971467 |
申请日期 |
2008.01.09 |
| 申请人 |
USUDA MANABU;UEDA TETSUZO;ORITA KENJI |
发明人 |
USUDA MANABU;UEDA TETSUZO;ORITA KENJI |
| 分类号 |
H01L33/06;H01L33/10;H01L33/22;H01L33/32;H01L33/42;H01L33/44 |
主分类号 |
H01L33/06 |
| 代理机构 |
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