| 摘要 |
By proper selection of illumination configuration, mask transmission, and mask bias, complex patterns of contact holes may be imaged with sufficient latitude for manufacturing at minimum half-pitches of k<SUB>1</SUB>=0.40 or below. In an embodiment, a method of transferring an image of a mask pattern onto a substrate with a lithographic apparatus is presented. The method includes illuminating a mask pattern of an attenuated phase shift mask with an illumination configuration including on-axis and off-axis components, the off-axis component of the illumination being an annular illumination extending near a pupil edge, and projecting an image of the illuminated mask pattern onto the substrate.
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