RESISTIVE SEMICONDUCTOR MEMORY DEVICE HAVING THREE DIMENSION STACK STRUCTURE AND METHOD FOR CONTROLLING THE SAME

摘要

A resistive semiconductor memory device having a three dimensional stack structure and a method for manufacturing the same are provided to achieve high integration and to enhance the reliability. A resistive semiconductor memory device having a three dimensional stack structure has a twin cell pattern in which a positive unit cell connected to a positive bit line and a negative unit cell connected to a negative bit line share one word line, and has a structure capable of accessing one bit data. Data of different logic states are stored in the positive unit cell and the negative unit cell from each other. Each of the positive unit cell and the negative unit cell includes one variable resistor and one diode. One terminal of the variable resistor is connected to the positive bit line and the other terminal of the variable resistor is connected to the negative bit line. A cathode of the diode is connected to a word line and an anode of the diode is connected to the variable resistor.