发明名称 |
Verfahren und System zur Abstimmung auf Wafer-Ebene von akustischen Volumenwellenresonatoren und Filter |
摘要 |
A method and system for tuning a bulk acoustic wave device at wafer level by reducing the thickness non-uniformity of the topmost surface of the device using a chemical vapor deposition process. A light beam is used to enhance the deposition of material on the topmost surface at one local location at a time. Alternatively, an electrode is used to produce plasma for locally enhancing the vapor deposition process. A moving mechanism is used to move the light beam or the electrode to different locations for reducing the thickness non-uniformity until the resonance frequency of the device falls within specification. <IMAGE> |
申请公布号 |
DE60223620(T2) |
申请公布日期 |
2008.07.24 |
申请号 |
DE2002623620T |
申请日期 |
2002.04.11 |
申请人 |
NOKIA CORP. |
发明人 |
KAITILA, JYRKI;TIKKA, PASI;ELLAE, JUHA |
分类号 |
C23C16/04;H03H3/013;H03H3/02;H03H3/04 |
主分类号 |
C23C16/04 |
代理机构 |
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代理人 |
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地址 |
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