发明名称 Semiconductor device
摘要 A high dielectric loss tangent layer is provided in a dielectric layer between a power-supply plane and a ground plane. The high dielectric loss tangent layer is arranged such that its edge is located between the edge of the power-supply plane and the edge of the ground plane. The edge of the high dielectric loss tangent layer is preferably separated by a predetermined distance or more from the edge of the power-supply plane or the edge of the ground plane which is located on the inner side.
申请公布号 US2008173987(A1) 申请公布日期 2008.07.24
申请号 US20080007758 申请日期 2008.01.15
申请人 ELPIDA MEMORY, INC. 发明人 KOSHIISHI KAZUTAKA;KATAGIRI MITSUAKI;ISA SATOSHI
分类号 H01L23/48 主分类号 H01L23/48
代理机构 代理人
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