| 摘要 |
In one aspect of the present invention, a semiconductor device may include a support member, a FinFET provided on the support member, which has a first fin, a source region provided in the first fin, a drain region provided in the first fin, and a gate electrode provided on the first fin via an gate insulating layer, and a capacitor provided on the support member, which has a second fin, a third fin and a dielectric layer provided between the second fin and the third fin. |
