Solid-state image-sensing device

摘要

In a solid-state image-sensing device, by global shuttering, whereby image sensing is performed simultaneously in all the pixels, a potential commensurate with the amount of light incident on a buried diode PD is held in an N-type floating diffusion region FD. Then a noise signal is outputted, and then the potential held in the N-type floating diffusion region FD is transferred to an N-type floating diffusion region FD 1 so that an image signal is outputted.