发明名称 Method and system for rapidly identifying silicon manufacturing defects
摘要 The present invention is directed to a method and system for rapidly identifying physical locations of manufacturing defects on the surface of a semiconductor die. The method and system first retrieve information about an electrical failure from an IC's electrical test result and then identify a set of electrical elements from the IC's layout design including a start resource and an end resource. Next, the method and system identify a physical signal path between the start resource and the end resource using the IC's layout design. Finally, the method and system examine a corresponding region on the semiconductor die that covers the physical signal path for manufacturing defects that may be responsible for the electrical failure.
申请公布号 US7401317(B1) 申请公布日期 2008.07.15
申请号 US20050128861 申请日期 2005.05.12
申请人 发明人
分类号 G06F17/50 主分类号 G06F17/50
代理机构 代理人
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