| 摘要 |
A method for forming metal lines of semiconductor devices is provided to prevent electromigration at a contact boundary between a glue layer and a metal line layer by implementing a diffusion barrier layer at a side wall of metal lines. A first interlayer dielectric(210) having a connection contact(211) is formed on a semiconductor substrate. A second interlayer dielectric(220) is formed on the first interlayer dielectric. By etching selectively the second interlayer dielectric, a trench for exposing the connection contact is formed. A glue layer is formed on the second interlayer dielectric including the trench. An oxide aluminum layer(240) is formed on the trench including the glue layer. By etching selectively the oxide aluminum layer of an upper portion of the second interlayer dielectric and a bottom of the trench, a side wall spacer(251) is formed. An aluminum layer is deposited on the glue layer including the side wall spacer. A planarization on the aluminum layer is performed to expose an upper portion of the first interlayer dielectric.
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