| 摘要 |
A ferroelectric memory device includes a cell block, a bit line, and a plate line. The cell block includes a ferroelectric capacitor and a transistor switch. The bit line applies a voltage to one electrode of the ferroelectric capacitor. The plate line applies a voltage to the other electrode of the ferroelectric capacitor. In a read operation of data, a first voltage is applied to the plate line. In a write operation of data, a second voltage different from the first voltage is applied to the plate line, and a voltage which is higher or lower than the second voltage is applied to the bit line.
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