MANUFACTURING METHOD FOR EPITAXIAL WAFER

摘要

A method for manufacturing an epitaxial wafer is provided to remove effectively mechanical manufacturing defects by implementing minimum polishing amounts for removing defects due to double side polishing. A wafer is formed by slicing an ingot to a predetermined thickness(S11). By performing polishing on both sides of the wafer, flatness and shape of the wafer are determined(S12). A surface of the wafer is polished less than 0.3 mum(S13). An epitaxial growing is performed on the surface of the wafer(S14). The surface of the wafer is washed with SC1 and SC2.