| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a manufacturing method of an SiN:H layer on a substrate converting light to voltage. <P>SOLUTION: In the manufacturing method of SiN:H layer, a silicon-contained target is sputtered to introduce at least one reaction gas between the target and the substrate. The silicon-contained target is mounted in a tubular shape and is formed of a Si-based alloy having 2 to 50 wt.% Al content. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
