MULTI-LAYER METAL WIRING OF SEMICONDUCTOR DEVICE PREVENTING MUTUAL METAL DIFFUSION BETWEEN METAL WIRINGS AND METHOD FOR FORMING THE SAME

摘要

A multi-layer metal wiring of a semiconductor device and a method for forming the same are disclosed. The multi-layer metal wiring of the semiconductor device includes a lower Cu wiring, and an upper Al wiring formed to be contacted with the lower Cu wiring, and a diffusion barrier layer interposed between the lower Cu wiring and the upper Al wiring. The diffusion barrier layer is formed of a W-based layer.