METHOD OF FORMING FLASH MEMORY DEVICE

摘要

A method for forming a flash memory device is provided to reduce an aspect ratio by etching a first spacer to lower a height of a first spacer. A semiconductor substrate(300) includes a cell region and a logic region. The cell region includes a stack gate(310) and a first spacer formed at one side of the stack gate. The logic region includes a gate electrode and a second spacer formed at one side of the gate electrode. A photoresist layer is formed on the cell region and the logic region to protect the second spacer. The photoresist layer is hardened by performing a hardening process. The first spacer is etched to the height necessary for protecting the second spacer.