| 摘要 |
<p>A method for forming a semiconductor device is provided to guarantee a sufficient margin by doubly forming a photoresist layer mask for defining a fine pattern of a dense pattern formation region and by making a photoresist layer mask in a rare pattern formation region have a greater size than the fine pattern in the dense pattern formation region by a predetermined multiple. A hard mask layer(110) is formed on a semiconductor substrate(100) including a dense pattern formation region(1000a) and a rare pattern formation region(1000b). A first photoresist layer is formed on the hard mask layer in the dense pattern formation region. An ARC(anti-reflective coating) is formed on the front surface of the substrate including the first photoresist layer. A second photoresist layer is formed on the ARC. A second photoresist layer pattern is formed to define a dense pattern and a rare pattern. The ARC and the first photoresist layer are etched by using the second photoresist layer pattern as a mask to form an ARC pattern and a first photoresist layer pattern. The hard mask layer is etched by using a mask as the second photoresist layer pattern, the ARC pattern and the first photoresist layer pattern. The dense pattern formation region can be a cell region. The rare pattern formation region can be a peripheral circuit region.</p> |
