| 摘要 |
<p>A semiconductor device and a method for manufacturing the same are provided to delay the turn-on of a transistor by forming a W-shaped groove in a gate forming region. A hard mask(202) is formed on a semiconductor substrate(200) having a gate forming region to block a middle section of the gate forming region and the remaining region except for the gate forming region. The gate forming region is etched with a vertical etch condition to form a W-shaped groove(A) of which an upper part of a middle section is positioned under upper sections of both edges. A gate dielectric, a gate conductive layer, and a gate hard mask layer are sequentially formed on the semiconductor substrate including a surface of the groove. The gate hard mask layer, the gate conductive layer, and the gate dielectric are etched to form a gate. A junction region is formed in a surface of the substrate at both sided of the gate.</p> |
