发明名称 SURFACE PROCESSING APPARATUS FOR SUBSTRATE
摘要 An apparatus processing a surface of a substrate is provided to increase a movement volume of reaction gas ion and radical by moving the ion and radical to a processing space through slits formed on a shower head. A plasma generator generates reaction gas plasma by reacting a reaction gas, and a substrate is processed in a processing space. A shower head(240) is provided with plural through-slits(241) for guiding the reaction gas plasma to the processing space. Plural source gas inlet pipes(242) are formed in a space between through-slits on a side of the shower head. The shower head has a buffer space for making distribution of the source gas uniform before the source gas is supplied to the inlet pipe.
申请公布号 KR20080061807(A) 申请公布日期 2008.07.03
申请号 KR20060136930 申请日期 2006.12.28
申请人 K.C.TECH CO., LTD. 发明人 SUNG, MYUNG EUN
分类号 H01L21/205 主分类号 H01L21/205
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