METHOD OF FABRICATING A FLASH MEMORY DEVICE

摘要

A method for manufacturing a flash memory device is provided to form a photoresist pattern for supporting a sidewall of a spacer pattern by using a photo mask for forming a floating gate pattern. An isolation layer is formed on a semiconductor substrate to define an active region. A floating gate pattern is formed on the active region. A photoresist pattern having a sidewall higher than the floating gate pattern is formed on the isolation layer. A spacer pattern is formed at a sidewall of the photoresist pattern to cover a part of the floating gate pattern. The floating gate pattern is etched by using the spacer pattern as an etch mask. An intergate dielectric(64) is inserted between a control gate electrode(CG) and a floating gate(FG).