| 摘要 |
<p>A method for fabricating a transistor in a semiconductor device is provided to prevent the generation of particles by precluding narrowness of an interval between gate patterns during forming a spacer layer. A method for fabricating a transistor in a semiconductor device comprises the steps of: forming gate patterns(210,215) on a semiconductor substrate(200) wherein a cell region and a periphery circuit region are defined; depositing a nitride layer for a spacer and an oxidation layer for the spacer on the gate patterns and an entire surface of the semiconductor substrate; forming the spacer(220) by etching the nitride layer and the oxidation layer in the periphery circuit region after cut-off the cell region; depositing an insulation layer(222) totally embedding the gate patterns of the cell region; and removing the insulation layer of the cell region and the oxidation layer after cut-off the periphery circuit region. A buffer oxidation layer(212) is fabricated before deposition of the nitride layer and the oxidation layer.</p> |
