| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method which can achieve a power management semiconductor device and an analog semiconductor device which are low cost, can be shortened in manufacturing period, use less power, and have a high driving performance and a high accuracy. SOLUTION: In the manufacturing method for a power management semiconductor device and an analog semiconductor device which include a CMOS, the resistance of a drain region is reduced at surge input by expanding upwards a silicon region which constitutes a lightly doped drain and thermal destruction is suppressed by suppressing a local increase in temperature. Consequently, a power management semiconductor device and an analog semiconductor device with a higher degree of freedom in designing a transistor can be achieved. COPYRIGHT: (C)2008,JPO&INPIT
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