| 摘要 |
A method for manufacturing a semiconductor device is provided to stabilize layers of an edge region by performing a thermal process. An edge region and a chip region including a predetermined lower element are defined on a wafer(21). An interlayer dielectric(22) is formed on the entire surface of the wafer. A stepped part between the edge region and the chip region is reduced by performing a bevel etch process for the edge region of the wafer. A thermal process for the edge region of the wafer is performed after the bevel etch process for the edge region of the wafer is performed. A CMP process is performed to planarize the wafer including the interlayer dielectric.
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