发明名称 PLASMA PROCESSING APPARATUS WITH UPPER CHAMBER OF DOME TYPE
摘要 A plasma processing apparatus is provided to decrease a manufacturing cost by forming an antenna implementation region using a ceramic material and the rest region using an aluminum material. A plasma processing apparatus includes an upper chamber(102), a lower chamber(112), and an antenna(108). A lower surface of the upper chamber is opened. An upper surface of the lower chamber is opened. The lower chamber is coupled with the upper chamber to form a process space therein. The antenna is arranged on an outer surface of the upper chamber. The antenna receives a high frequency source to form a plasma atmosphere in the process space. The upper chamber is made by using different materials at an antenna implementation region and the rest regions.
申请公布号 KR20080060783(A) 申请公布日期 2008.07.02
申请号 KR20060135275 申请日期 2006.12.27
申请人 SEMES CO., LTD. 发明人 JUNG, SOON BIN
分类号 H01L21/205;H01L21/02;H01L21/3065 主分类号 H01L21/205
代理机构 代理人
主权项
地址