| 摘要 |
A method for etching a poly gate of a transistor is provided to effectively remove by-products existing between poly gates by subjecting the poly gate to an etching process. A poly gate of a transistor used in a flash memory is subjected to a first etching process using a gas mixed with Cl2, HBr, He/O2 and CF4 gas, and then an oxide layer of the transistor is subjected to a second etching process using a gas mixed with CHF3 and Ar gas. After the first etching process, the poly gate is subjected to a third etching process using a gas mixed with HBr, He and He/O2 gas. The second etching process uses the CHF3 gas and the Ar gas in a ratio of 1:1 to remove the oxide layer existing between the poly gates.
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