| 摘要 |
FIELD: metallurgy. ^ SUBSTANCE: invention refers to obtaining a high pure silicon which can be used at production of solar elements. Pure silicon dioxide is melted at a temperature of 1900°C and a mixture of powders of pure silicon and silicon dioxide taken at a stoichiometric ratio is introduced into the melt. The resulted gaseous silicon monoxide is then reduced in a gaseous phase with pure methane at a temperature of 2300-2500°C and elementary silicon is produced. ^ EFFECT: allows to upgrade purity of processed silicon and to reduce its production cost. ^ 1 ex, 1 tbl |
