| 摘要 |
<p>[PROBLEMS] To provide a resistance change device that is capable of reducing the amount of current flowing per cell as compared with that of the prior art; and a process for producing the same. [MEANS FOR SOLVING PROBLEMS] In resistance change memory (ReRAM) adapted to store data through resistance change of resistance change device (71), the resistance change device (71) is comprised of under electrode (67a) of a noble metal, such as Pt; transition metal film (68a) of a transition metal, such as Ni; transition metal oxide film (69a) of a transition metal oxide, such as NiOx; and upper electrode (70a) of a noble metal, such as Pt.</p> |
