| 摘要 |
A pixel circuit for a wide dynamic range CMOS image sensor is provided to select a wide dynamic range or high sensitivity. A pixel circuit for a wide dynamic range CMOS image sensor includes a first photo diode(PD1), a second photo diode(PD2), a first transfer transistor(M1), a second transfer transistor(M1'), a reset transistor(M2), a drive transistor(M3), and a select transistor(M4). The first and second photo diodes produce charge corresponding to input light. The first transfer transistor is connected between the first photo diode and a floating diffusion region and operates according to a first transfer signal. The second transfer transistor is connected between the second photo diode and the floating diffusion region and operates according to a second transfer signal. The reset transistor resets the floating diffusion region according to a reset signal. The drive transistor amplifies a voltage of the floating diffusion region. The select transistor outputs the amplified voltage from the drive transistor according to a select signal.
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