发明名称 |
Field Effect Transistor (FET) having nano tube and method of manufacturing the FET |
摘要 |
A transistor includes: a semiconductor substrate; a channel region arranged on the semiconductor substrate; a source and a drain respectively arranged on either side of the channel region; and a conductive nano tube gate arranged on the semiconductor substrate to transverse the channel region between the source and the drain. Its method of manufacture includes: arranging a conductive nano tube on a surface of a semiconductor substrate; defining source and drain regions having predetermined sizes and traversing the nano tube; forming a metal layer on the source and drain regions; removing a portion of the metal layer formed on the nano tube to respectively form source and drain electrodes separated from the metal layer on either side of the nano tube; and doping a channel region below the nano tube arranged between the source and drain electrodes by ion-implanting.
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申请公布号 |
US2008150043(A1) |
申请公布日期 |
2008.06.26 |
申请号 |
US20070826170 |
申请日期 |
2007.07.12 |
申请人 |
CHA SEUNG-NAM;JANG JAE-EUN;JUNG JAE-EUN;JIN YONG-WAN;SONG BYONG-GWON |
发明人 |
CHA SEUNG-NAM;JANG JAE-EUN;JUNG JAE-EUN;JIN YONG-WAN;SONG BYONG-GWON |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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