| 摘要 |
There is provided a layer transferred wafer subjected to a process for regenerating to be reused many times for an SOI layer wafer which is used to manufacture an SOI wafer with an excellent process yield in which oxygen precipitate nuclei or oxygen precipitates are eliminated and generation of HF defects are inhibited by performing the process for regenerating the layer transferred wafer generated as a by-product by an ion implantation separation method. The process for regenerating a layer transferred wafer in which the layer transferred wafer 11b obtained as a by-product in manufacturing a bonded SOI wafer 10 by an ion implantation separation method so as to be reused for an SOI layer wafer 11 of the bonded SOI wafer 10, comprises: rapidly heating the layer transferred wafer 11b in an oxidizing atmosphere, then holding it for a fixed time and subsequently rapidly cooling it; and mirror-polishing a surface of the layer transferred wafer 11b. |
