发明名称 |
Nitride semiconductor wafer |
摘要 |
A nitride semiconductor substrate having properties preferable for the manufacture of various nitride semiconductor devices is made available, by specifying or controlling the local variation in the off-axis angle of the principal surface of the nitride semiconductor substrate. In a nitride semiconductor single-crystal wafer having a flat principal surface, the crystallographic plane orientation of the principal surface of the nitride semiconductor single-crystal wafer varies locally within a predetermined angular range.
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申请公布号 |
US7390359(B2) |
申请公布日期 |
2008.06.24 |
申请号 |
US20060612481 |
申请日期 |
2006.12.19 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
MIYANAGA MICHIMASA;UEMATSU KOJI;OKAHISA TAKUJI |
分类号 |
C30B25/12;H01L21/205 |
主分类号 |
C30B25/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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