| 摘要 |
A magneto resistive effect device, a magnetic head, and a magnetic memory device are provided to make the length in the core width direction of a first pinned layer longer than that in the core width direction of a reference pinned layer in order to improve asymmetry of wavelength of magnetic information. A magneto resistive effect device(10) comprises an antiferromagnetic layer(11), a first pinned layer(12), a reference pinned layer(14), and a free layer(16). A magnetizing direction(A) is fixed at the first pinned layer by the antiferromagnetic layer. The reference pinned layer is anti-parallel to the first pinned layer. A magnetizing direction(B) for the reference pinned layer is changed by an external magnetic field. The length in the core width direction of the first pinned layer is longer than that in the core width direction of the reference pinned layer.
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