发明名称 Semiconductor apparatus and manufacturing method of semiconductor apparatus
摘要 A technique capable of improving reliability of a semiconductor apparatus is provided. A semiconductor device having a metal electrode on at least one principal surface and a die pad (a metal member) electrically connected to the metal electrode via conductive resin composed of base resin (an organic binder) mixed with a Ag particle (metal powder) including precious metal are provided, and a configuration is made so that a porous nano-particle coat film (a precious metal layer) having an Ag (precious metal) nano particle fired on a metal surface is formed on at least one of mutually opposed surfaces of the metal electrode and the die pad.
申请公布号 US2008145607(A1) 申请公布日期 2008.06.19
申请号 US20070002677 申请日期 2007.12.17
申请人 RENESAS TECHNOLOGY CORP. 发明人 KAJIWARA RYOICHI;ITO KAZUTOSHI
分类号 B32B3/10;B32B5/16;H01L21/44 主分类号 B32B3/10
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