| 摘要 |
A resist laminate (30) includes an inorganic substrate (21), the first resist layer (22) provided on one principal surface of the inorganic substrate (21), and the second resist layer (23) which is provided on the first resist layer (22) and which has a microrelief layer (23a) on the surface. The microrelief layer (23a) is formed by transferring using a mold, wherein: the thickness of the residual film remaining after the transferring is 50nm or less; the ratio of the projection top width (lcv) of the fine pattern of the mold to the recess opening width (lcc) thereof, namely, lcv/lcc ratio is within a prescribed range; and the ratio of the volume (Vr2) of the second resist layer (23) to the recess volume (Vcm) of the fine pattern of the mold, namely, Vr2/Vcm ratio is within a prescribed range. Thus, a resist mask (25) which has a thin and uniform residual film can be easily formed on the inorganic substrate (21). |
