发明名称 |
MANUFACTURING METHOD OF LIGHT EMITTING DIODE INCLUDING CURRENT SPREADING LAYER |
摘要 |
<p>Provided is a method of manufacturing a light emitting diode using a nitride semiconductor, which including the steps of: forming n- and p-type current spreading layers using a hetero-junction structure; forming trenches by dry-etching the n- and p-type current spreading layers; forming an n-type metal electrode layer in the trench of the n-type current spreading layer; forming a p-type metal electrode layer in the trench of the p-type current spreading layer; and forming a transparent electrode layer on the p-type metal electrode layer, thereby improving current spreading characteristics as compared with the conventional method of manufacturing the light emitting diode, and enhancing operating characteristics of the light emitting diode.</p> |
申请公布号 |
WO2008069482(A1) |
申请公布日期 |
2008.06.12 |
申请号 |
WO2007KR05995 |
申请日期 |
2007.11.26 |
申请人 |
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE;BAE, SUNG BUM |
发明人 |
BAE, SUNG BUM |
分类号 |
H01L33/14;H01L33/20;H01L33/32;H01L33/38 |
主分类号 |
H01L33/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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