发明名称 Ballistic deflection transistor and logic circuits based on same
摘要 A quantum well is formed in a substrate to define a hub, ports extending from the hub, and a deflective structure in the hub. Electrons move through the hub and ports according to the ballistic electron effect. Gates control the movement of the electrons, causing them to be incident on the deflective structure on one side or the other, thus controlling the direction in which they are deflected and the port through which they pass.
申请公布号 US2008136454(A1) 申请公布日期 2008.06.12
申请号 US20070878434 申请日期 2007.07.24
申请人 DIDUCK QUENTIN;MARGALA MARTIN 发明人 DIDUCK QUENTIN;MARGALA MARTIN
分类号 H03K19/00;H01L21/334;H01L29/12 主分类号 H03K19/00
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