发明名称 |
Method of removing photoresist and method of manufacturing a semiconductor device |
摘要 |
A method of removing a photoresist may include permeating supercritical carbon dioxide into the photoresist on a substrate having a conductive structure including a metal. The photoresist permeating the supercritical carbon dioxide may be easily removable. The photoresist permeating the supercritical carbon dioxide may be removed using a photoresist cleaning solution from the substrate. The photoresist cleaning solution may include an alkanolamine solution of about 8 percent by weight to about 20 percent by weight, a polar organic solution of about 25 percent by weight to about 40 percent by weight, a reducing agent of about 0.5 percent by weight to about 3 percent by weight with the remainder being water. The photoresist may be easily removed without damaging the conductive structure in a plasma process.
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申请公布号 |
US2008138972(A1) |
申请公布日期 |
2008.06.12 |
申请号 |
US20070984340 |
申请日期 |
2007.11.16 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KANG DAE-HYUK;LEE HYO-SAN;HAN DONG-GYUN;HONG CHANG-KI;LEE KUN-TACK |
分类号 |
H01L21/28;B08B3/08 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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