| 摘要 |
A nitride semiconductor light emitting device and a method for manufacturing the same are provided to prevent the damage of a quantum well layer due to high temperature by progressively increasing temperature during an active layer formation process. An InxGa1-xN (0<x<1) quantum well layer(510) is formed by injecting an In source gas, a Ga source gas, and an N reactive gas into a reactive chamber at a first temperature. The In source gas is blocked and temperature is increased higher than the first temperature to form first and second GaN barrier layers(520,530) on the InxGa1-xN (0<x<1) quantum well layer. The first and second GaN barrier layers are sequentially formed at a different formation temperature. The first GaN barrier layer is formed at temperature lower than the second GaN barrier layer.
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